Diode House

Diode House is a trading organization of Electronic Components catering to requirements of electronics industries in India. Established in 1994, Diode House is a leading supplier for all types of active and passive components and distributors for various manufacturing companies such as CDIL, Desai Electronics, Watt Electronics, Sree Solder and Kwality Photonics.

Additional Information:

• Delivery Time: Ex-Stock

CYG Wayon WML10N80M3

Additional Information:

• Item Code: WML10N80M3
• Delivery Time: EX-STOCK

IRF630 MOSFETIRF630 is a third generation N Channel Power MOSFETs that providesdesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.The TO-220AB package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 W. The low thermal resistanceand low package cost of the TO-220AB contribute to itswide acceptance throughout the industry.
Features of IRF630N MOSFET:

• Extremely high dv/dt capability
• Very low intrinsic capacitances
• Gate charge minimized
• VDSDrain-source voltage (VGS= 0) 200 V
• VDGRDrain-gate voltage (RGS= 20 k) 200 V
• IDDrain current (continuous) at TC=100 DegreeC 5.7A
• PTOTTotal dissipation at TC= 25 DegreeC 75W

Diode House is a trading organization of Electronic Components catering to requirements of electronics industries in India. Established in 1994, Diode House is a leading supplier for all types of active and passive components and distributors for various manufacturing companies such as CDIL, Desai Electronics, Watt Electronics, Sree Solder and Kwality Photonics.

IRF9630 P-Channel Power MOSFETIRFP9630 is a 6.5 Ampere, 200 Volt, 0.800 Ohm, P-Channel Power MOSFETs. These are P-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.IRFP9630power MOSFETis designed for applications such as switching regulators, switching converters, motor drivers, relay drivers and drivers for other high-power switching devices. The high input impedance allows these types to be operated directly from integrated circuits.


Features of IRF9630 P-Channel Power MOSFET:

• 6.5A, 200V
• rDS(ON) = 0.800
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance
• Drain to Source Voltage VDS-200 V
• Drain to Gate Voltage (RGS= 20k) VDGR-200 V
• Continuous Drain Current ID-6.5 A, TC= 100oC ID-4 A
• Maximum Power Dissipation PD75 W
• Single Pulse Avalanche Energy Rating EAS500 mJ
• Operating and Storage Temperature TJ, TSTG-55 to 150oC

IRFZ44N Power MOSFETIRFZ44N is an advanced HEXFET Power MOSFETs whichutilizes advanced processing techniques to achieveextremely low on-resistanceper silicon area. This benefit,combined with the fast switching speed and ruggedizeddevice design thatHEXFET power MOSFETsare wellknown for, provides the designer with an extremely efficientand reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry.

Features of IRFZ44N Power MOSFET:

• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175 DegreeC Operating Temperature
• Fast Switching
• Fully Avalanche Rated

IRF530 Power MOSFETIRF530 is a third generation Power MOSFETs and they provide thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.The TO-220AB package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 Watt. The low thermal resistanceand low package cost of the TO-220AB contribute to itswide acceptance throughout the industry.

Features of IRF530 Power MOSFET:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

IRF510 N-Type Power MOSFETIRF510 is a N-Channel Third generation power MOSFETs that provides thedesigner with the best combination of fast switching,ruggedized device design, low on-resistance andcost-effectiveness.The TO-220AB package is universally preferred for allcommercial and industrial applications at power dissipationlevels to approximately 50 Watt.

Features Of Irf510 Power Mosfet:

• Dynamic dV/dt rating
• Repetitive avalanche rated
• Fast switching
• Ease of paralleling
• Simple drive requirements

IRFP450 Power MOSFETIRFP450 is a Third generation Power MOSFET that provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

Features Of IRFP450 Power MOSFET:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead (Pb)-free Available
• VDS=500V
• Drain-Source Voltage VDS500V

IRFP264 Power MOSFETIRFP264 is a third generation Power MOSFETs from provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247AC package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications.

Features of IRFP264 Power MOSFET:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
• VDS=250V
• Drain-Source Voltage VDS250V
• Gate-Source Voltage VGS+- 20V

IRFP260N Power MOSFETFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFETPower MOSFETsare well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.IRFP260N MOSFETis available in TO-247 Package.TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.

Features of IRFP260N Power MOSFET:

• Advanced Process Technology
• Dynamic dv/dt Rating
• 175 DegreeC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• Ease of Paralleling
• Simple Drive Requirements
• ID@ TC= 25 DegreeC Continuous Drain Current, VGS@ 10V 50 A
• ID@ TC= 100 DegreeC Continuous Drain Current, VGS@ 10V 35 A
• IDMPulsed Drain Current 200 A
• PD@TC= 25 DegreeC Power Dissipation 300 W
• Linear Derating Factor 2.0 W/ DegreeC
• EASSingle Pulse Avalanche Energy 560 mJ
• dv/dt Peak Diode Recovery dv/dt 10 V/ns

IRF9530N Power MOSFETFifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFETPower MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. TheIRFP9530 MOSFETcomes in TO-220 Package.TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.


Features of IRF9530N Power MOSFET:

• Advanced Process Technology
• Dynamic dv/dt Rating
• 175 DegreeC Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated
• ID@ TC= 25 DegreeC Continuous Drain Current, VGS@ -10V -14 A
• ID@ TC= 100 DegreeC Continuous Drain Current, VGS@ -10V -10 A
• PD@TC= 25 DegreeC
• VGSGate-to-Source Voltage +- 20 V
• EASSingle Pulse Avalanche Energy 250 mJ
• IARAvalanche Current -8.4 A
• EARRepetitive Avalanche Energy 7.9 mJ

IRF3205 Power MOSFETAdvanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features of IRF3205 Power MOSFET:

• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• 175 DegreeC Operating Temperature
• Fast Switching
• Fully Avalanche Rated
• ID @ TC = 100 DegreeC Continuous Drain Current, VGS @ 10V 80 A
• PD @TC = 25 DegreeC Power Dissipation 200 W
• VGS Gate-to-Source Voltage +- 20 V
• EAR Repetitive Avalanche Energy 20 mJ
• dv/dt Peak Diode Recovery dv/dt 5.0 V/ns

IRF9540 Power MOSFETIRF9540 is aFifth Generation HEXFETsfrom International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.IRF9540 Power MOSFETTO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

Features of IRF9540:

• Advanced Process Technology
• Dynamic dv/dt Rating
• 175 DegreeC Operating Temperature
• Fast Switching
• P-Channel
• Fully Avalanche Rated

P90NF03 Power MOSFETThis application specificPower MOSFETis the third generation of STMicroelectronics unique "Single Feature Size(TM)" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses.P90NF03 MOSFETis extremely important for motherboards where fast switching and high efficiency are of paramount importance.

Features of P90NF03L Power MOSFET:

• Optimal RDS(on)x Qgtrade-off
• Conduction losses reduced
• Switching losses reduced
• VDSDrain-source voltage (VGS= 0) 30 V
• VGSGate-source voltage +- 20 V
• IDDrain current (continuous) at TC= 25 DegreeC 90 A
• IDDrain current (continuous) at TC=100 DegreeC 65 A
• PTOTTotal dissipation at TC= 25 DegreeC 150 W
• TJOperating junction temperature -65 to 175
• Rthj-caseThermal resistance junction-case Max 1 DegreeC/W
• Rthj-aThermal resistance junction-ambient Max 62.5 DegreeC/W
• TlMaximum lead temperature for soldering purpose 300 DegreeC

IRFP2907 Automotive MOSFETSpecifically designed for Automotive applications, this Stripe Planar design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of thisIRFP2907 power MOSFETare a 175 DegreeC junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications.

Features of IRFP2907 Automotive MOSFET:

• Advanced Process Technology
• Ultra Low On-Resistance
• Dynamic dv/dt Rating
• Fast Switching
• Repetitive Avalanche Allowed up to Tjmax
• Power Dissipation(PD@TC = 25 DegreeC) 470 W
• Gate-to-Source Voltage(VGS) +- 20 V

Applications IRFP2907 Automotive MOSFET:

• Integrated Starter Alternator

TIP142 NPN Bipolar Junction Transistor isComplementary power Darlington transistors. The devices are manufactured in planar technology with "base island" layout and monolithicDarlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. The TIP142 from Multicomp are through hole, darlington transistor in TO-247(3P) package. TIP142 transistor is used for low speed switching and amplification.TIP142 NPN Bipolar Junction Transistoris used in signal processing.

Features of TIP142 NPN Bipolar Junction Transistor

• Monolithic Darlington configuration
• Integrated antiparallel collector-emitter diode

ApplicationsTIP142 NPN Bipolar Junction Transistor

• Linear and switching industrial equipment
• Consumer Electronics
• Power Management
• Portable Devices

STP80NF10 Power MOSFETThisPower MOSFETseries realized with STMicro electronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is there fore suitable as primary switch in advanced high efficiency isolated DC-DC converters for telecom and computer application. It is also intended for any application with low gate charge drive requirements.
Features of STP80NF10 MOSFET:

• Exceptional dv/dt capability

• 100% Avalanche tested

• Application oriented characterization

• ID Drain current (continuous) at TC = 25 DegreeC 80A

• ID Drain current (continuous) at TC = 100 DegreeC 80A

• PTOT Total dissipation at TC = 25 DegreeC 300W

• Derating factor 2W/ DegreeC

• dv/dt Peak diode recovery voltage slope 7V/ns

• EAS Single pulse avalanche energy 350mJ

• Tstg Storage temperature

• Rthj-case Thermal resistance junction-case max 0.5 DegreeC/W

• Rthj-amb Thermal resistance junction-ambient max 62.5 DegreeC/W

• Tl Maximum lead temperature for soldering purpose 300 DegreeC

IRFZ48N Power MOSFETThird generationPower MOSFETsfrom Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The IRFZ48N is TO-220AB package which universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.

 

Features of IRFZ48N MOSFET:

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Ultra Low On-Resistance

• Very Low Thermal Resistance

• 175 DegreeC Operating Temperature

• Fast Switching

• Ease of Paralleling

• Compliant to RoHS Directive 2002/95/EC

• Single Pulse Avalanche Energy EAS 100mJ

• Avalanche Current IAR 50A

• Repetitive Avalanche Energy EAR 19mJ

IRFB3077 Power MOSFET Features of IRFB3077 MOSFET

• Worldwide Best RDS(on) in TO-220

• Improved Gate, Avalanche and Dynamic dV/dt Ruggedness

• Fully Characterized Capacitance and Avalanche SOA

• Enhanced body diode dV/dt and dI/dt Capability

• Continuous Drain Current ID @ TC = 25 DegreeC VGS@ 10V 210A

• Continuous Drain Current ID @ TC = 100 DegreeC VGS@ 10V 150A

• Power Dissipation PD @TC = 25 DegreeC 370 W

• VGS Gate-to-Source Voltage +- 20 V

• Peak Diode Recovery dv/dt 2.5 V/ns

• TSTGStorage Temperature Range -55 to + 175 oC

Applications of IRFB3077 MOSFET:

• High Efficiency Synchronous Rectification in SMPS

• Uninterruptible Power Supply

• High Speed Power Switching

• Hard Switched and High Frequency Circuits

The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.IR2110 output driversfeature a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used todrive an N-channel power MOSFET or IGBTin the high side configuration which operates up to 500 or 600 volts.

Features of IR2110 Power MOSFET & IGBT Driver

• Floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune Gate drive supply range from 10 to 20V

• Undervoltage lockout for both channels
• 3.3V logic compatible

Separate logic supply range from 3.3V to 20V
Logic and power ground +-5V offset

• CMOS Schmitt-triggered inputs with pull-down
• Cycle by cycle edge-triggered shutdown logic
• Matched propagation delay for both channels

• Outputs in phase with inputs

generationPowerIRFP350PBF N-channel Power MOSFETIRFP350 is a third MOSFETsfrom Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.TheIRFP350PBFis TO-247AC package preferred for commercial-industrial applications where higher power levels preclude the use of TO-220AB devices. The TO-247AC is similar but superior to the earlier TO-218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.

Features of IRFP350 MOSFET:

• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Isolated Central Mounting Hole
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC

Toshiba Gen-4 Super-Junction DTMOSIV MOSFETs use the state-of-the-art single epitaxial process DTMOSIV, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. With a reduction in the RDS(on) it makes it possible to house lower RDS(on)chips in the same packages. This helps to improve the efficiency and reduce the size of power supplies. These devices are ideal for use with switching regulators.

Features:

• Low drain-source on-resistance
• Easy to control Gate switching
• 30% reduction in RDSon*A compared to previous generation
• Improved figure of merit (FOM) compared to DTMOS III generation
• Reduction in Coss
• Application of latest process technology: single epitaxial process
• Wide range of on-resistances and packaging options
• 45% reduction of Qgd (gate drain charge) at X-Series

Applications:

• Switched Mode Power Supply (SMPS)
• Lighting
• Power Factor Control (PFC)
• Industrial Applications (including UPS)

Additional Information:

• Port of Dispatch: Mumbai
• Delivery Time: EX-Stock

IRF540 MOSFETN-Channel Power MOSFETsThese are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. These types can be operated directly from integrated circuits.

Power MOSFET IRF8408A, 500V, 0.850 Ohm, N-Channel Power MOSFETThis N-Channel enhancement mode silicon gate power fieldeffect transistor is an advanced power MOSFET designed,tested, and guaranteed to withstand a specified level ofenergy in the breakdown avalanche mode of operation. All ofthese power MOSFETs are designed for applications suchas switching regulators, switching converters, motor drivers,relay drivers, and drivers for high power bipolar switchingtransistors requiring high speed and low gate drive power.These types can be operated directly from integratedcircuits.

Features of IRF840:

• rDS(ON) = 0.850
• Single Pulse Avalanche Energy Rated
• SOA is Power Dissipation Limited
• Nanosecond Switching Speeds
• Linear Transfer Characteristics
• High Input Impedance

2N50 N-Channel Power MOSFET2N50 is an N-channel mode power MOSFET using DMOS technology. This technology allows a minimum on-state resistance and superior switching performance. It also can withstand high energy pulse in the avalanche and commutation mode.2N50 MOSFETis generally applied in high efficiency switch mode power supplies, active power factor correction and electronic lamp ballasts based on half bridge topology.
Features of 2N50 MOSFET:

• Low gate charge
• Low crss
• Fast switching
• 100% avalanche tested
• Improved dv/dt capability

2N60 2 Ampere 600Volts N-Channel POWER MOSFETThe 2N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gatecharge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used athigh speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridgecircuits.
Features Of 2N60 Power Mosfet:

• RDS(ON) = 3.8 at VGS = 10V.
• Ultra Low gate charge (typical 9.0nC)
• Low reverse transfer capacitance (Crss = typical 5.0 pF)
• Fast switching capability
• Avalanche energy specified
• Improved dv/dt capability, high ruggedness

LM2575 Adjustable Voltage RegulatorThe LM2575 series of regulators are monolithic integrated circuits ideally suited for easy and convenient design of a stepdown switching regulator (buck converter). All circuits of this series are capable of driving a 1.0 A load with excellent line and load regulation. These devices are available in fixed output voltages of 3.3 V, 5.0 V, 12 V, 15 V, and an adjustable output version. These regulators were designed to minimize the number of external components to simplify the power supply design. Standard series of inductors optimized for use with the LM2575 are offered by several different inductor manufacturers.LM2575 voltage Regulatoris aswitchmode power supply, its efficiency is significantly higher in comparison with popular threeterminal linear regulators, especially with higher input voltages. In many cases, the power dissipated by theLM2575 regulatoris so low, that no heat-sink is required or its size could be reduced dramatically. The LM2575 features include a guaranteed +-4% tolerance on output voltage within specified input voltages and output load conditions, and +-10% on the oscillator frequency (+-2% over 0 DegreeC to 125 DegreeC). External shutdown is included, featuring 80 uA typical standby current. The output switch includes cyclebycycle current limiting, as well as thermal shutdown for full protection under fault conditions.


Features of LM2575 Voltage Regulator:

• 3.3 V, 5.0 V, 12 V, 15 V, and Adjustable Output Versions
• Adjustable Version Output Voltage Range of 1.23 V to 37 V +-4% Maximum Over Line and Load Conditions
• Requires Only 4 External Components
• TTL Shutdown Capability, Low Power Standby Mode
• High Efficiency
• Uses Readily Available Standard Inductors
• Thermal Shutdown and Current Limit Protection
• Moisture Sensitivity Level (MSL) Equals 1
• PbFree Packages are Available.

Applications of LM2575

• Simple and HighEfficiency StepDown (Buck) Regulators
• Efficient PreRegulator for Linear Regulators
• OnCard Switching Regulators
• Positive to Negative Converters (BuckBoost)
• Negative StepUp Converters
• Power Supply for Battery Chargers

G15N60 IGBT Specifications of G15N60 IGBT:

• 75% lower Eoff compared to previous generation combined with low conduction losses
• Short circuit withstand time - 10 s
• Designed for
• Motor controls
• Inverter

NPT-Technology for 600V applications offers:

• Very tight parameter distribution
• High ruggedness, temperature stable behavior
• Parallel switching capability

IGBT Module Distributors in India, Diode House.
Many types IGBT Module available in ready stock. Application:- UPS / Inverter / Stabilizer etc. 

Additional Information:

• Delivery Time: Ex-Stock

STP80NF55-08 Power MOSFETThisPower MOSFETis the latest development of STMicroelectronics unique "single feature size" strip-based process. The resulting transistor shows extremely high packing density for low on resistance, ruggedavalanchecharacteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

Features of STP80NF55-08 MOSFET:

• Standard threshold drive

• VDS Drain-source voltage (VGS = 0) 55V

• ID Drain current (continuos) at TC = 25 DegreeC 80A

• ID Drain current (continuos) at TC = 100 DegreeC 80A

• PTOT Total dissipation at TC = 25 DegreeC 300W

• Derating factor 2 W/ DegreeC

• Operating junction temperature -55 to 175 DegreeC

LM2575-12V Step-Down Switching RegulatorThis is a fixed 12 volts LM2575 step down Switching Regulator.The LM2575 series of regulators are monolithic integrated circuits ideally suited for easy and convenient design of astepdown switching regulator(buck converter). All circuits of this series are capable of driving a 1.0 A load with excellent line and load regulation. These devices are available in fixed output voltages of 3.3 V, 5.0 V, 12 V, 15 V, and an adjustable output version. These regulators were designed to minimize the number of external components to simplify the power supply design. Standard series of inductors optimized for use with the LM2575 are offered by several different inductor manufacturers.Since theLM2575-12Vconverter is a switchmode power supply, its efficiency is significantly higher in comparison with popular threeterminal linear regulators, especially with higher input voltages. In many cases, the power dissipated by the LM2575 regulator is so low, that no heatsink is required or its size could be reduced dramatically. TheLM2575features include a guaranteed +-4% tolerance on output voltage within specified input voltages and output load conditions, and +-10% on the oscillator frequency (+-2% over 0 DegreeC to 125 DegreeC). External shutdown is included, featuring 80 uA typical standby current. The output switch includes cyclebycycle current limiting, as well as thermal shutdown for full protection under fault conditions.

Features of LM2575-5V:

• Output Voltage (Vin = 25 V, ILoad = 0.2 A, TJ = 25 DegreeC) Vout Min11.76V ; Max12.24 V
• Output Voltage (15.0 V Vin 40 V, 0.2 A ILoad 1.0 A) Vout

TJ = 25 DegreeC 11.52 to 12.48 V TJ = 40 to +125 DegreeC 11.4 to 12.6V:

• Efficiency (Vin = 15 V, ILoad = 1.0 A) 88 %
• Requires Only 4 External Components
• TTL Shutdown Capability, Low Power Standby Mode
• High Efficiency
• Uses Readily Available Standard Inductors
• Thermal Shutdown and Current Limit Protection
• Moisture Sensitivity Level (MSL) Equals 1
• PbFree Packages are Available.

Applications of LM2575:

• Simple and HighEfficiency StepDown (Buck) Regulators
• Efficient PreRegulator for Linear Regulators
• OnCard Switching Regulators
• Positive to Negative Converters (BuckBoost)
• Negative StepUp Converters
• Power Supply for Battery Chargers

LM2576-5V StepDown switching regulatorLM2576 voltage regulator is a monolithic integrated circuit ideally suited for easy and convenient design of astep down switching regulator(buck converter). All circuits of this series are capable of driving a 3.0 A load with excellent line and load regulation. These devices are available in fixed output voltages of 3.3 V, 5.0 V, 12 V, 15 V, and an adjustable output version. These regulators were designed to minimize the number of external components to simplify the power supply design. Standard series of inductors optimized for use with theLM2576 voltage regulatorare offered by several different inductor manufacturers.Since theLM2576 converter is a switchmode power supply, its efficiency is significantly higher in comparison with popular threeterminal linear regulators, especially with higher input voltages. In many cases, the power dissipated is so low that no heat sink is required or its size could be reduced dramatically. A standard series of inductors optimized for use with theLM2576are available from several different manufacturers. This feature greatly simplifies the design of switchmode power supplies. The LM2576 features include a guaranteed +-4% tolerance on output voltage within specified input voltages and output load conditions, and +-10% on the oscillator frequency (+-2% over 0 DegreeC to 125 DegreeC). External shutdown is included, featuring 80 uA (typical) standby current. The output switch includes cyclebycycle current limiting, as well as thermal shutdown for full protection under fault conditions.

Features of LM2576-5V:

• Output Voltage (Vin = 12 V, ILoad = 0.5 A, TJ = 25 DegreeC) Vout Min4.9V; Max5.1V
• Output Voltage (8 V Vin 40 V, 0.5 A ILoad 3.0 A) Vout V

• Efficiency (Vin = 15 V, ILoad = 3.0 A) =77%
• Guaranteed 3.0 A Output Current
• Wide Input Voltage Range
• Requires Only 4 External Components
• TTL Shutdown Capability, Low Power Standby Mode
• High Efficiency
• Uses Readily Available Standard Inductors
• Thermal Shutdown and Current Limit Protection
• Moisture Sensitivity Level (MSL) Equals 1
• PbFree Packages are Available

Applications of LM2576-5V:

• Simple HighEfficiency StepDown (Buck) Regulator
• Efficient PreRegulator for Linear Regulators
• OnCard Switching Regulators
• Positive to Negative Converter (BuckBoost)
• Negative StepUp Converters
• Power Supply for Battery Chargers

TLP350 Optocoupler MOSFET & IGBT DriverThe TOSHIBA TLP350 consists of aGaAAs light-emitting diodeand anintegrated photodetector. This unit is an 8-lead DIP package.The TLP350 opto-coupleris suitable for gate driving IGBTs or power MOSFETs.

Features of TLP350 opto-coupler:

• Peak output current IO = +-2.5A (max)
• Guaranteed performance over temperature 40 to 100 DegreeC
• Threshold input current IFLH= 5 mA (max)
• Switching time (tpLH/tpHL) 500 ns (max)
• Common mode transient immunity 15 kV/s
• Storage temperature range Tstg-55 to 125 DegreeC
• Lead soldering temperature (1 0 s) Tsol260 DegreeC